熱阻論文：基于C-Mount熱沉封裝不同激光器芯片尺寸熱分析.doc

熱阻論文：基于C-Mount熱沉封裝不同激光器芯片尺寸熱分析【中文摘要】隨著半導體激光器工藝技術的不斷提高,輸出功率的不斷增加,熱效應成為制約大功率半導體激光器發(fā)展主要障礙。其半導體激光器的散熱能力常用熱阻表示。本文制作了條寬為150m,腔長為1000m的半導體激光器,并用In焊料燒結在C-Mount熱沉上,并進行TO-3封裝。用波長漂移法對基于C-Mount封裝類型的多只3W激光器的熱阻進行了測量,得出其熱阻為5-3/W.5.9/W之間。并用ANSYS有限元熱分析軟件在理想條件下對其進行了模擬,從其實測和模擬結果的差異引入了由于焊料層空洞增加的接觸熱阻。并用ANSYS有限元熱分析軟件模擬引入接觸熱阻后的熱阻,其值和實測的結果基本吻合,所以我們用同樣的方法對C-Mount熱沉封裝的不同芯片尺寸進行了模擬。本文又對3W激光器在不同的占空比下測量了其溫升值,結果發(fā)現(xiàn)其在不同的占空比下的溫升是不同的,其中在0.5%占空比條件下其溫升情況為連續(xù)條件的19.6%。并用ANSYS有限元熱分析軟件對100%占空比下的溫升情況進行了模擬,從模擬結果中可以看出脈沖的特點是激光器在1ms內(nèi)溫升就能達到穩(wěn)態(tài)時候的36%,激光器在0.1s就能達到穩(wěn)態(tài)溫度的95%以上。所以即便激光器在0.5%占空比條件下工作時,其溫升也是不能忽略的?！居⑽恼縒ith the development of Semiconductor Laser technology and the increasing of the output power, the laser thermal effect which has become the main obstacle to the development of high power Semiconductor Lasers.The thermal-resistance is usually used as the cooling capacity of Semiconductor Lasers.In this paper,we made a Semiconductor Laser with strip width of 150m and cavity length of 1000m,which sintered on C-Mount heat sink with In solder.At the same time, we packaged the Laser with TO-3.We measured the Thermal-resistance of several 3W Lasers which are based on C-Mount heat sink with wavelength shift method.The Thermal-resistance that we get are between 5.3/W-5.9/W. We simulated the Thermal-resistance of Semiconductor Laser with ANSYS Finite element thermal analysis software on ideal conditions,and we introducted the contact resistance caused by the empty in In solder through the measured and simulated results. We used ANSYS software simulate the Thermal-resistance of Laser after introduct the contact resistance,and its value and the measured results are basically consistent We used the same method to simulate the Thermal-resistance of different chip size of Lasers,which based on C-Mount heat sink.In this paper,we measured the temperature rise of different duty cycles of 3W Lasers, the results show that the different duty cycle of the temperature rise are different, which 0.5% duty cycle is about 20% to continues conditions of temperature rise. We used ANSYS software to simulate the temperature rise of 100% duty cycle,from simulation,and it could get that the temperature rise is 36% of the steady state in I ms.and the temperature rise is 95% of the steady state in 0.1 s. Therefore, even if the laser under the conditions of 0.5% duty cycle work, the temperature should not be negligible.【關鍵詞】熱阻 C-Mount封裝 激光二極管 In焊料 ANSYS有限元【英文關鍵詞】Thermal-resistance C-Mount-package Laser-Diode In-Solder ANSYS Finite-element【目錄】基于C-Mount熱沉封裝不同激光器芯片尺寸熱分析摘要4-5ABSTRACT5目錄6-7第一章 緒論7-141.1 引言71.2 半導體激光器的歷史回顧7-101.3 半導體激光器的發(fā)展趨勢10-111.4 半導體激光器熱特性分析研究意義111.5 半導體激光器熱特性的國內(nèi)外研究現(xiàn)狀11-131.6 本文研究的主要內(nèi)容13-14第二章 半導體激光器原理和激光器結構14-272.1 半導體激光器的基本原理14-202.2 量子阱激光器20-232.3 應變量子阱激光器23-27第三章 分子束外延(MBE)和808nm激光器結構設計27-353.1 分子束外延(MBE)27-303.2 MBE的優(yōu)缺點30-313.3 808nm半導體激光器結構設計31-35第四章 制作808nm半導體激光器工藝35-484.1 光刻35-374.2 刻蝕37-394.3 電極制作39-414.4 激光器燒結工藝414.5 半導體激光器封裝工藝41-48第五章 激光器熱分析的理論基礎48-525.1 瞬態(tài)和穩(wěn)態(tài)定義485.2 溫度梯度48