




版權(quán)說明:本文檔由用戶提供并上傳,收益歸屬內(nèi)容提供方,若內(nèi)容存在侵權(quán),請(qǐng)進(jìn)行舉報(bào)或認(rèn)領(lǐng)
文檔簡(jiǎn)介
Chapter3
DigitalCircuitsAbinarynumbersystemcontainstwosymbolsandasetofoperationsButwhatdoesa'0'ora'1'looklikeinreallife?Manythingscanrepresents0'sand1's,butweareinterestedinrepresentingthemusing"electricalsignals"Then,howtorepresenta0or1withanelectricalsignal(voltageorcurrent)?Weneedtoknowtheknowledgeoftheelectricalaspectsofdigitalcircuits.3.1LogicSignalsandGatesLogicSignals
-alogicsignalmaylooklikethis…tv(t)vthresholdwedefineathresholdtorepresentwhenweconsiderthesignalaLOGIC0orLOGIC1.Digitaldesignersoftenusethewords“LOW”and“HIGH”inplaceof“0”and“1”.LogicSignalsandGatesHowtogettheHIGHandLOWVoltage?AssignHIGHto0or1?VOUTVINVccR獲得高、低電平的基本原理PositiveLogic(正邏輯)10NegativeLogic(負(fù)邏輯)10LogicSignalsandGatesLogicCircuit
-acircuitthatproduceslogicoutputsdependingonthelogicinputs
ex)LogicWeneedtoknow-theelectricalbehaviorofthecircuit-thelogicrelationbetweeninputsandoutputsBasicConceptsTwotypesoflogiccircuits:Combinationallogiccircuit(組合邏輯電路)Sequentiallogiccircuit(時(shí)序邏輯電路)AlogiccircuitwhoseoutputsdependonlyonitscurrentinputsAlogiccircuitwithmemory,whoseoutputsdependonthecurrentinputsandthesequenceofpastinputsBasiclogicfunctions:AND,OR,NOTBasicLogicFunction:AND000010100111ABZLogicExpression(邏輯表達(dá)式)Z=A·BSwitch:1-on,0-offLamp:1-Light,0-outProducea1outputifandonlyifallofitsinputsare1TruthTable
(真值表)&ABZABZ(邏輯符號(hào))ABZLogicSymbolBasicLogicFunction:ORLogicExpressionZ=A+BABZABZProducea1ifandonlyifoneormoreofitsinputare1
≥1ABZABZ000011101111TruthTableLogicSymbolAZ0110LogicExpressionY=A=A’AZRProduceanoutputvaluethatistheoppositeofitsinputvalue.UsuallycalledanInverter
(反相器)1ZAAZBasicLogicFunction:NOTTruthTableLogicSymbolNANDandNORNAND(與非)
LogicExpressionZ=(A·B)’
LogicSymbolNOR(或非)
LogicExpressionZ=(A+B)’
LogicSymbol
&≥1TruthTable&≥1Operation
NAND
NOR
Symbol
ExpressionY=(A?B)’Y=(A+B)’AB
0
0
1
11
Y
1
1
1
0
Y
1
0
0
0
100ComplexLogicfunctionAND-OR-INVERT
(與或非)ABCD&≥1YABYCDF=(AB+CD)’XORandXNORXOR(ExclusiveOR,異或)2-inputgatewhoseoutputis1iftheinputsaredifferent.XNOR(ExclusiveNOR,同或)
2-inputgatewhoseoutputis1iftheinputsaresame.F=AB=A’·B+A·B’F=A⊙B=A·B+A’·B’ABF000011101110XORABF001010100111XNORAB=(A⊙B)’OperationXORXNOR
Symbols
ExpressionY=AB
=AB+ABY=A⊙B=AB+ABAB
0
0
0
1
1
0
11
Y
0
1
1
0
Y
1
0
0
1
=1ABYABYABY=ABYTruthtableAB=A⊙BA⊙B=AB3.2LogicFamiliesLogicGates
-we'veseenthebasiclogicgatesthatweusetoformmorecomplexlogicexpressions
INV,AND,NAND,OR,NOR,XOR,XNORLogicSignaling
-we'veseenhowweuseanelectricalsignaltorepresentandtransmitlogicvaluestAB10101011113.2LogicFamiliesNowwewanttoseehowweactuallycreatethesecircuitsandsignalsusingelectronicsTherearedifferentways(orcircuits)toimplementlogicgatesThecircuitsaredesignedtointerfacewithothercircuitswiththesametypeofdesignAcollectionofIC'sdesignedtointerfacewitheachotheriscalleda"LogicFamily"Themostcommonfamilieswedealwithare:
1)CMOS 2)TTL3.3CMOSLogicCMOSLogiclevels5.0V3.5V1.5V0.0VATypicalLogicCircuit:5-VoltPowerSupplyOtherPower-SupplyVoltages:3.3,2.5or1.8VoltsLogic1(High)Logic0(Low)undefinedMOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOSDrain(漏極)Source(源極)Gate(柵極)Vgs+NMOSSource(源極)Drain(漏極)Gate(柵極)
+VgsPMOS-thesedevicecanbethoughtofasa"voltagecontrolledresistor"-alterthevoltageontheGatetoturnON/OFFthecurrentflowMOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOSDrain(漏極)Source(源極)Gate(柵極)Vgs+NMOSUsually:Vgs>=0
Vgs=0Rds
VeryHigh
OFF(截止?fàn)顟B(tài))
VgsRds
ON(導(dǎo)通狀態(tài))MOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOS:Source(源極)Drain(漏極)Gate(柵極)
+VgsPMOSUsually:Vgs<=0
Vgs=0RdsVeryHigh
Off(截止?fàn)顟B(tài))
Vgs
Rds
On(導(dǎo)通狀態(tài))MOSFET(MOS晶體管)ThegateofaMOStransistorhasaveryhighimpedance.(overamegohm,大于兆歐)Regardlessofgatevoltage,almostnocurrentbetweengate-sourceorgate-drain (漏電流leakagecurrent,microampereA)ThegateofaMOStransistoriscapacitivelycoupledtothesourceanddrain.
柵極與源和漏極之間有電容耦合。輸入信號(hào)轉(zhuǎn)換時(shí),電容充放電,功耗較大BasicswitchingcircuitofMOSFETvI+–vO–+iD+VDDRDDGSChoosingproperparameters,LOWInput,OFF,HIGHOutputHIGHInput,ON,LOWOutputBasicCMOSInverterCircuitFunctionalBehavior1、VIN=0.0V VGSN=0.0V,TnOFF VGSP=VIN–VDD=–5.0V,TpON
VOUT
VDD=5.0V2、VIN=VDD=5.0V VGSN=5.0V,TnON VGSP=VIN–VDD=0.0V,TpOFF VOUT
0VDD=+5.0VVOUTVINTpTnGDSSBasicCMOSInverterCircuitVDD=+5.0VVOUTVINTpTnGDSSVDDVINVOUTOnwhenVINislowOnwhenVINishigh(p-channel)(n-channel)CMOSNANDGate
FunctionalBehavior1、EitherInput(AorB)isLow,Then EitherT1,T3isOff EitherT2,T4isOn ZisHigh[ZVDD]2、BothInputs(AandB)areHigh,Then BothT1,T3areOn BothT2,T4areOff ZisLow[Z0V]VDD=+5.0VZABT1T2T4T3CMOSNORGateFunctionalBehavior
1、BothInputs(AandB)areLow,Then BothT1,T3areOff BothT2,T4areOn ZisHigh[ZVDD]2、EitherInput(AorB)isHigh,Then EitherT1,T3isOn EitherT2,T4isOff ZisLow[Z0V]VDD=+5.0VZABT1T2T4T3CMOS
NANDandNORgatesdonothaveidenticalelectricalperformance.Foragivensiliconarea,ann-channeltransistorhaslower“on”resistancethanap-channeltransistor.Therefore,whentransistorsareputinseries,k
n-channeltransistorshavelower“on”resistancethandok
p-channelones.Whoisfaster,k-inputNANDork-inputNORgate?k-inputNANDisfaster,morepopular.Fan-In(扇入)Fan-In,theNumberofInputsthataGatecanhave.TheAdditive“on”ResistanceofseriestransistorslimitstheFan-InofCMOSgates. (導(dǎo)通電阻的可加性限制了CMOS門的扇入數(shù))WhoseFan-Inislarger,NANDorNOR?Typically,Fan-Inis4forNORgatesand6forNANDgates.Fan-In(扇入)AlargenumberofinputscanbemadebycascadinggateswithfewerinputsF=ABCDEFGHNon-invertingGatesVDD=+5.0VAZ(Non-invertingbuffers)非反相緩沖器HowtogetaANDGate?VDD=+5.0VABZCDCMOSAND-OR-INVERTGate
Z=AB+CDCABBADCDX=(A+B)?(C+D)DABCDABCOUT=D+A?(B+C)Challenge:??3.4ElectronicBehaviorofCMOSCircuitsLogicVoltageLevels(邏輯電壓電平)DCNoiseMargins
(直流噪聲容限)Fan-Out(扇出)Speed,PowerConsumption
(速度、功耗)Noise,ElectrostaticDischarge
(噪聲、靜電放電)Open-DrainOutputs,ThreeStateOutputs(漏極開路輸出、三態(tài)輸出)ElectricalNotlogic(Table3-3)DataSheet(數(shù)據(jù)表)Specifications(規(guī)格說明)3.5CMOSStaticElectricalBehaviorCMOSStaticBehavior
-"Static"or"DC"referstothegate'soperationwhentheinputsareNOTchanging
-alsocalled"SteadyState”CMOSDynamicBehavior
-Alsocalled"AC"performance3.5.1LogicLevelsandNoiseMarginsLogicLevelsandNoiseMarginsVOUTVIN5.01.53.55.0Typicalinput-outputtransfercharacteristicofaCMOSinverterVDD=+5.0VVOUTVINTpTn0101LogicLevelsSpecificationsHIGHABNOMALLOWVOLmaxVILmaxVIHminVOHminVCC-0.1Vground+0.1V0.7VCC0.3VCC3.5.1LogicLevelsandNoiseMarginsDCNoiseMargin(多大的噪聲會(huì)使最壞輸出電壓被破壞得不可識(shí)別)3.5.1LogicLevelsandNoiseMarginsVDDVoutHIGHVOHminVSSLOWVOLmaxVDDHIGHVIHminVSSLOWVILmaxVinNoiseMarginNoiseMarginHIGHStateNoiseMargin:(VOHmin-VIHmin)
LOWStateNoiseMargin:(VILmax-VOLmax)LeakageCurrentRegardlessofthevoltageappliedtotheinputofaCMOSdevice,theinputconsumesverylittlecurrent.Onlytheleakagecurrentofthetransistors’gates.thereisaspecificationthattellsushowmuchcurrentcanbeexpectedtoflow--IIH
:MaximumcurrentflowingwhendrivingaHIGH--IIL
:MaximumcurrentflowingwhendrivingaLOW3.5.1LogicLevelsandNoiseMargins3.5.2CircuitBehaviorwithResistiveLoadsVCCAZVCCRThevRpRnVThev
+VOUTVINResistiveLoads
-RequirenontrivialamountsofcurrenttooperateCMOSDrivingaLOWVOUT<=VOLmaxTheOutputsinkCurrent-Sinkingcurrent(吸收電流或灌電流)
IOLmax:MaximumcurrentthatcanbesinkedwhendrivingaLOW3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRp>1MRnResistiveLoadsVOLmaxIOLmaxCMOSDrivingaHIGHVOUT>=VOHminTheOutputsourceCurrent-Sourcingcurrent(提供電流或拉電流)
IOHmax:MaximumcurrentthatcanbesourcedwhendrivingaHIGH3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRpRn>1MResistiveLoadsVOHminIOHmax3.5.2CircuitBehaviorwithResistiveLoadsVOUT=0VCC=+5.0VRThevVThev
+VIN=1CMOSDrivingaLOWEstimatetheSinkingcurrent3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRThevVThev
+VOUT=1VIN=0CMOSDrivingaHIGHEstimatetheSourcecurrent:3.5.3CircuitBehaviorwithNon-idealInputsSofar,wehaveassumedthattheHIGHandLOWinputstoaCMOScircuitareidealvoltages,veryclosetothepower-supplyrails.Iftheinputvoltageisnotclosetothepower-supplyrail-The“ON”transistormaynotbefully“ON”-The“OFF”transistormaynotbefully“OFF”Thesetwoeffectscombinetomovetheoutputvoltageawayformthepower-supplyrail.3.5.3CircuitBehaviorwithNon-idealInputsVCC=+5.0V4002.5kVIN1.5VVOUT4.31VVCC=+5.0V4k200VIN3.5VVOUT0.24V輸出電壓變壞(有電阻性負(fù)載時(shí)更差)更糟糕的是:輸出端電流,功耗3.5.4Fan-outFan-Out: -TheNumberofInputsthatthegatecandrivewithoutexceedingitsworst-caseloadingspecifications.Fan-outmustbeexaminedforbothpossibleoutputstates,HIGNandLOWOverallFan-out=Min(HIGH-stateandLOW-state)
【總扇出=min(高態(tài)扇出,低態(tài)扇出)】DCFan-outandACFan-out
(直流扇出和交流扇出)74HCTDrives74LSLOWFan-Out
(低態(tài)扇出):Fan-OUT
HIGHFan-Out(高態(tài)扇出):“excess”drivingcapability:(高態(tài)剩余驅(qū)動(dòng)能力)CMOS
溫馨提示
- 1. 本站所有資源如無特殊說明,都需要本地電腦安裝OFFICE2007和PDF閱讀器。圖紙軟件為CAD,CAXA,PROE,UG,SolidWorks等.壓縮文件請(qǐng)下載最新的WinRAR軟件解壓。
- 2. 本站的文檔不包含任何第三方提供的附件圖紙等,如果需要附件,請(qǐng)聯(lián)系上傳者。文件的所有權(quán)益歸上傳用戶所有。
- 3. 本站RAR壓縮包中若帶圖紙,網(wǎng)頁內(nèi)容里面會(huì)有圖紙預(yù)覽,若沒有圖紙預(yù)覽就沒有圖紙。
- 4. 未經(jīng)權(quán)益所有人同意不得將文件中的內(nèi)容挪作商業(yè)或盈利用途。
- 5. 人人文庫網(wǎng)僅提供信息存儲(chǔ)空間,僅對(duì)用戶上傳內(nèi)容的表現(xiàn)方式做保護(hù)處理,對(duì)用戶上傳分享的文檔內(nèi)容本身不做任何修改或編輯,并不能對(duì)任何下載內(nèi)容負(fù)責(zé)。
- 6. 下載文件中如有侵權(quán)或不適當(dāng)內(nèi)容,請(qǐng)與我們聯(lián)系,我們立即糾正。
- 7. 本站不保證下載資源的準(zhǔn)確性、安全性和完整性, 同時(shí)也不承擔(dān)用戶因使用這些下載資源對(duì)自己和他人造成任何形式的傷害或損失。
最新文檔
- 2025年中國(guó)六孔按鈕盒市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)停車警示牌市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)人力資源模擬系統(tǒng)軟件市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)中型防爆接線盒市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)三相混合式步進(jìn)電機(jī)驅(qū)動(dòng)器市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)PO再生料市場(chǎng)調(diào)查研究報(bào)告
- 2025年中國(guó)4,4-二羥基二苯甲酮市場(chǎng)調(diào)查研究報(bào)告
- 量子世界真實(shí)解讀試題及答案
- 2025年多功能長(zhǎng)壽無滴棚膜項(xiàng)目發(fā)展計(jì)劃
- 2025采購(gòu)管理軟件系統(tǒng)的購(gòu)銷合同模板
- 重慶征信有限責(zé)任公司招聘筆試題庫2025
- 湖北省武漢市2025屆高中畢業(yè)生四月調(diào)研考試政治試題及答案(武漢四調(diào))
- GB/T 15608-2006中國(guó)顏色體系
- GB/T 14315-2008電力電纜導(dǎo)體用壓接型銅、鋁接線端子和連接管
- 中考語文二輪專題復(fù)習(xí):散文和小說閱讀
- 《民法》全冊(cè)精講課件
- 【人衛(wèi)九版內(nèi)分泌科】第十一章-甲狀腺功能減退癥課件
- 護(hù)理人員業(yè)務(wù)技術(shù)檔案 模板
- 金融監(jiān)管學(xué)-金融監(jiān)管學(xué)課件
- 語文一年級(jí)上冊(cè):拼音9《y-w》ppt教學(xué)課件
- 標(biāo)準(zhǔn)溶液配制與標(biāo)定原始記錄(氫氧化鈉)
評(píng)論
0/150
提交評(píng)論